型号:  SKM100GB12T4G

功能描述:  IGBT Half-Bridge - Trench, SEMITRANS 2, VCES=1200V, IC=160A, VF=2.5V

制造商:  SEMIKRON

Channel Type:  N

Collector Current:  160 A

Collector to Emitter Shorted Voltage:  1200 V

Collector to Emitter Voltage:  1200 V

Configuration:  Dual

Continuous Collector Current:  154 A

Dimensions:  106.4 x 61.4 x 30.5 mm

Energy Rating:  10.7 mJ

Gate to Emitter Voltage:  20 V

Height:  1.201" (30.5mm)

Length:  4.188" (106.4mm)

Maximum Operating Temperature:  +175 °C

Minimum Operating Temperature:  -40 °C

Mounting Type:  Screw

Number of Pins:  7

Package Type:  Semitrans3

Resistance, Thermal, Junction to Case:  0.038 K/W

Series:  IGBT Series

Temperature Operating Range:  -40 to +175 °C

Type:  Trench

Width:  2.417" (61.4mm)