型号:  SQM120N03-1M5L_GE3

功能描述:  MOSFET N-CH 30V 120A TO263

制造商:  Vishay Siliconix

Series:  TrenchFET®

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  30 V

Current - Continuous Drain (Id) @ 25°C:  120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  4.5V, 10V

Rds On (Max) @ Id, Vgs:  1.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:  2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  270 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  15605 pF @ 15 V

FET Feature:  -

Power Dissipation (Max):  375W (Tc)

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  TO-263

Package / Case:  TO-263-3, D²Pak (2 Leads + Tab), TO-263AB