型号:  STGF20H65DFB2

功能描述:  TRENCH GATE FIELD-STOP 650 V, 20

制造商:  STMicroelectronics

Series:  HB2

Package:  Tube

IGBT Type:  Trench Field Stop

Voltage - Collector Emitter Breakdown (Max):  650 V

Current - Collector (Ic) (Max):  40 A

Current - Collector Pulsed (Icm):  60 A

Vce(on) (Max) @ Vge, Ic:  2.1V @ 15V, 20A

Power - Max:  45 W

Switching Energy:  265µJ (on), 214µJ (off)

Input Type:  Standard

Gate Charge:  56 nC

Td (on/off) @ 25°C:  16ns/78.8ns

Test Condition:  400V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr):  215 ns

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Through Hole

Package / Case:  TO-220-3 Full Pack

Supplier Device Package:  TO-220FP