型号:  T3160N18TOF VT

功能描述:  

制造商:  Infineon Technologies

封装/外壳：  BG-T11126K-1

封装：  Tray

RoHS compliant：  yes

Packing Type：  TRAY

Moisture Level：  NA

Configuration：  Electrical Triggered Phase Control Thyristor

VDRM / VRRM [V]：  1800.0

VDRM/ VRRM (V)：  1800.0 V

Housing：  Disc dia 111mm height 26mm / Ceramic

ITAVM/TC [A/°C] (@180° el sin)：  3160/85

rT [mΩ] (@Tvj max) max：  0.082

Tvj [°C] max：  125.0

ITSM：  57000.0 A

VT0 [V] (@Tvj max) max：  0.85

∫I2dt [A²s · 103] (@10ms, Tvj max)：  16245.0

RthJC [K/kW] (@180° el sin) max：  8.5

RthJC [K/kW] (@180° el sin) max：  8.5

rT [mΩ] (@Tvj max) max：  0.082

Clamping force [kn] min max：  42.0 95.0

ITAVM：  3160 (180 ° el sin)

ITAVM/TC [A/°C] (@180° el sin)：  3160/85

Tvj [°C] max：  125.0

VT/IT [V/kA] (@Tvj max)：  1.37/6.0

VT0 [V] (@Tvj max) max：  0.85

∫I2dt [A²s · 103] (@10ms, Tvj max)：  16245.0

ITSM [A] (@10ms, Tvj max)：  57000.0

VT/IT [V/kA] (@Tvj max)：  1.37/6.0

Clamping force [kn] min max：  42.0 95.0

tq [µs]：  250.0

ITSM [A] (@10ms, Tvj max)：  57000.0

无铅情况/RoHs：  无铅/符合RoHs