型号:  TK170V65Z,LQ

功能描述:  MOSFET N-CH 650V 18A 5DFN

制造商:  Toshiba Semiconductor and Storage

Series:  DTMOSVI

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  650 V

Current - Continuous Drain (Id) @ 25°C:  18A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  170mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:  4V @ 730µA

Gate Charge (Qg) (Max) @ Vgs:  29 nC @ 10 V

Vgs (Max):  ±30V

Input Capacitance (Ciss) (Max) @ Vds:  1635 pF @ 300 V

FET Feature:  -

Power Dissipation (Max):  150W (Tc)

Operating Temperature:  150°C

Mounting Type:  Surface Mount

Supplier Device Package:  4-DFN-EP (8x8)

Package / Case:  4-VSFN Exposed Pad