型号:  TPH3206LDG-TR

功能描述:  GANFET N-CH 600V 17A 3PQFN

制造商:  Transphorm

Series:  -

Package:  Tray

FET Type:  N-Channel

Technology:  GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):  600 V

Current - Continuous Drain (Id) @ 25°C:  17A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  8V

Rds On (Max) @ Id, Vgs:  180mOhm @ 11A, 8V

Vgs(th) (Max) @ Id:  2.6V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:  9.3 nC @ 4.5 V

Vgs (Max):  ±18V

Input Capacitance (Ciss) (Max) @ Vds:  760 pF @ 480 V

FET Feature:  -

Power Dissipation (Max):  96W (Tc)

Operating Temperature:  -55°C ~ 175°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  3-PQFN (8x8)

Package / Case:  3-PowerDFN