型号:  WNSC08650T6J

功能描述:  SILICON CARBIDE POWER DIODE

制造商:  WeEn Semiconductors

Series:  -

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

Diode Type:  Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max):  650 V

Current - Average Rectified (Io):  8A

Voltage - Forward (Vf) (Max) @ If:  1.7 V @ 8 A

Speed:  No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):  0 ns

Current - Reverse Leakage @ Vr:  50 µA @ 650 V

Capacitance @ Vr, F:  267pF @ 1V, 1MHz

Mounting Type:  Surface Mount

Package / Case:  4-VDFN Exposed Pad

Supplier Device Package:  5-DFN (8x8)

Operating Temperature - Junction:  175°C (Max)