型号:  APT35GP120B2D2G

功能描述:  IGBT PT COMBI 1200V 35A TO-247

制造商:  Microchip Technology

Series:  POWER MOS 7®

Package:  Tube

IGBT Type:  PT

Voltage - Collector Emitter Breakdown (Max):  1200 V

Current - Collector (Ic) (Max):  96 A

Current - Collector Pulsed (Icm):  140 A

Vce(on) (Max) @ Vge, Ic:  3.9V @ 15V, 35A

Power - Max:  540 W

Switching Energy:  1mJ (on), 1.185mJ (off)

Input Type:  Standard

Gate Charge:  150 nC

Td (on/off) @ 25°C:  14ns, 99ns

Test Condition:  800V, 35A, 5Ohm, 15V

Reverse Recovery Time (trr):  85 ns

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Through Hole

Package / Case:  TO-247-3 Variant

Supplier Device Package:  T-MAX™ [B2]