型号:  APT80GA90S

功能描述:  IGBT PT MOS 8 SINGLE 900 V 80 A

制造商:  Microchip Technology

Series:  POWER MOS 8®

Package:  Tube

IGBT Type:  PT

Voltage - Collector Emitter Breakdown (Max):  900 V

Current - Collector (Ic) (Max):  145 A

Current - Collector Pulsed (Icm):  239 A

Vce(on) (Max) @ Vge, Ic:  3.1V @ 15V, 47A

Power - Max:  625 W

Switching Energy:  1.625mJ (on), 1.389mJ (off)

Input Type:  Standard

Gate Charge:  200 nC

Td (on/off) @ 25°C:  18ns/149ns

Test Condition:  600V, 47A, 4.7Ohm, 15V

Reverse Recovery Time (trr):  -

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Package / Case:  TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package:  D3PAK