型号:  BSD816SNH6327

功能描述:  MOSFET N-CH 20V 1.4A SOT363-6

制造商:  Infineon Technologies

Series:  -

Package:  Bulk

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  20 V

Current - Continuous Drain (Id) @ 25°C:  1.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  160mOhm @ 1.4A, 2.5V

Vgs(th) (Max) @ Id:  950mV @ 3.7µA

Gate Charge (Qg) (Max) @ Vgs:  600 pC @ 2.5 V

Vgs (Max):  ±8V

Input Capacitance (Ciss) (Max) @ Vds:  180 pF @ 10 V

FET Feature:  -

Power Dissipation (Max):  500mW (Ta)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  PG-SOT363-6

Package / Case:  6-VSSOP, SC-88, SOT-363