型号:  C3M0015065K

功能描述:  SICFET N-CH 650V 120A TO247-4L

制造商:  Cree/Wolfspeed

Series:  C3M™

Package:  Tube

FET Type:  N-Channel

Technology:  SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):  650 V

Current - Continuous Drain (Id) @ 25°C:  120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  15V

Rds On (Max) @ Id, Vgs:  21mOhm @ 55.8A, 15V

Vgs(th) (Max) @ Id:  3.6V @ 15.5mA

Gate Charge (Qg) (Max) @ Vgs:  188 nC @ 15 V

Vgs (Max):  +15V, -4V

Input Capacitance (Ciss) (Max) @ Vds:  5011 pF @ 400 V

FET Feature:  -

Power Dissipation (Max):  416W (Tc)

Operating Temperature:  -40°C ~ 175°C (TJ)

Mounting Type:  Through Hole

Supplier Device Package:  TO-247-4L

Package / Case:  TO-247-4