型号: G3R160MT17D
功能描述: SIC MOSFET N-CH 21A TO247-3
制造商: GeneSiC Semiconductor
Series: G3R™
Package: Tube
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 1000 V
FET Feature: -
Power Dissipation (Max): 175W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
联系人:李
电话:13632880560
联系人:Alien
联系人:李先生
电话:17080955875
联系人:余先生,张先生
电话:13826514222
联系人:柯小姐
电话:13417122760
联系人:刘先生
电话:18390902447
联系人:蔡永记
电话:18617195508
联系人:黄先生
联系人:罗志坚
电话:13923482469
联系人:张S
电话:13631518768