型号: G3R20MT17K
功能描述: SIC MOSFET N-CH 124A TO247-4
制造商: GeneSiC Semiconductor
Series: G3R™
Package: Tube
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
FET Feature: -
Power Dissipation (Max): 809W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4
Package / Case: TO-247-4
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