型号: G3R20MT17N
功能描述: SIC MOSFET N-CH 100A SOT227
制造商: GeneSiC Semiconductor
Series: G3R™
Package: Tube
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 15V
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
FET Feature: -
Power Dissipation (Max): 523W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
联系人:郑小姐
电话:18188616613
联系人:李先生
电话:17080955875
联系人:Alien
联系人:余先生,张先生
电话:13826514222
联系人:罗先生
电话:19854773352
联系人:张小姐
联系人:刘群
电话:13129599479
联系人:庄梓豪
电话:18620174454
联系人:郑秋兰
电话:18948314942
联系人:施先生
电话:13823155485