型号:  IRFHM8342TRPBF-IR

功能描述:  MOSFET N-CH 30V 10A/28A 8PQFN DL

制造商:  International Rectifier

Series:  HEXFET®

Package:  Bulk

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  30 V

Current - Continuous Drain (Id) @ 25°C:  10A (Ta), 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  16mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:  2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:  10 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  560 pF @ 25 V

FET Feature:  -

Power Dissipation (Max):  2.6W (Ta), 20W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  8-PQFN-Dual (3.3x3.3), Power33

Package / Case:  8-PowerVDFN