型号:  NTLJS4D7N03HTAG

功能描述:  MOSFET N-CH 25V 11.6A 6PQFN

制造商:  ON Semiconductor

Series:  -

Package:  Tape & Reel (TR)

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  25 V

Current - Continuous Drain (Id) @ 25°C:  11.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  4.5V, 10V

Rds On (Max) @ Id, Vgs:  4.1mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:  2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  14 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  851 pF @ 15 V

FET Feature:  -

Power Dissipation (Max):  860mW (Ta)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  6-PQFN (2x2)

Package / Case:  6-PowerWDFN