型号:  SI2308BDS-T1-E3/BKN

功能描述:  60V; N-Channel 220 MOHM 4.5 V Rated MOSFET

制造商:  Siliconix / Vishay

Channel Type:  N

Configuration:  Single

Dimensions:  3.04 x 1.4 x 1.02 mm

Drain Current:  2.3 A

Drain to Source On Resistance:  0.192 Ω

Drain to Source Voltage:  60 V

Fall Time:  17 ns

Forward Transconductance:  5 S

Forward Voltage, Diode:  1.2 V

Gate to Source Voltage:  ±20 V

Height:  0.04" (1.02mm)

Input Capacitance:  190 pF @ 30 V

Junction to Ambient Thermal Resistance:  115 °C/W

Length:  0.119" (3.04mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Surface Mount

Number of Elements per Chip:  1

Number of Pins:  3

Operating and Storage Temperature:  -55 to +150 C

Package Type:  TO-236

Polarization:  N-Channel

Power Dissipation:  1.66 W

Series:  SI23 Series

Temperature Operating Range:  -55 to +150 °C

Total Gate Charge:  6.8 nC

Turn Off Delay Time:  17 ns

Turn On Delay Time:  6 ns

Typical Gate Charge @ Vgs:  4.5 nC @ 30 V

Voltage, Breakdown, Drain to Source:  60 V

Width:  0.055" (1.4mm)