型号:  SIHB186N60EF-GE3

功能描述:  MOSFET N-CH 600V 8.4A D2PAK

制造商:  Vishay Siliconix

Series:  EF

Package:  Tube

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  600 V

Current - Continuous Drain (Id) @ 25°C:  8.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  193mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id:  5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  32 nC @ 10 V

Vgs (Max):  ±30V

Input Capacitance (Ciss) (Max) @ Vds:  1081 pF @ 100 V

FET Feature:  -

Power Dissipation (Max):  156W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  D2PAK (TO-263)

Package / Case:  TO-263-3, D²Pak (2 Leads + Tab), TO-263AB