型号:  SISH536DN-T1-GE3

功能描述:  N-CHANNEL 30 V (D-S) MOSFET POWE

制造商:  Vishay Siliconix

Series:  TrenchFET® Gen V

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  30 V

Current - Continuous Drain (Id) @ 25°C:  24.7A (Ta), 67.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  4.5V, 10V

Rds On (Max) @ Id, Vgs:  3.25mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:  2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  25 nC @ 10 V

Vgs (Max):  +16V, -12V

Input Capacitance (Ciss) (Max) @ Vds:  1150 pF @ 15 V

FET Feature:  -

Power Dissipation (Max):  3.57W (Ta), 26.5W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  PowerPAK® 1212-8SH

Package / Case:  PowerPAK® 1212-8SH