型号:  SISS42DN-T1-GE3

功能描述:  MOSFET N-CH 100V 11.8/40.5A PPAK

制造商:  Vishay Siliconix

Series:  TrenchFET® Gen IV

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  100 V

Current - Continuous Drain (Id) @ 25°C:  11.8A (Ta), 40.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  7.5V, 10V

Rds On (Max) @ Id, Vgs:  14.4mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:  3.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:  38 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  1850 pF @ 50 V

FET Feature:  -

Power Dissipation (Max):  4.8W (Ta), 57W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  PowerPAK® 1212-8S (3.3x3.3)

Package / Case:  PowerPAK® 1212-8S