型号:  SSM6N37FE,LM

功能描述:   DUAL NCH MOSFET, ES6 PACKAGE

制造商:  Toshiba

标准包装：  4,000

FET 型 ：  2 N-Channel (Dual)

FET特点：  Logic Level Gate

漏极至源极电压（VDSS）：  20V

电流-连续漏极（编号）@ 25°C：  250mA

Rds（最大）@ ID，VGS：  2.2 Ohm @ 100mA, 4.5V

VGS（TH）（最大）@ Id：  1V @ 1mA

栅极电荷（Qg）@ VGS：  -

输入电容（Ciss）@ Vds的：  12pF @ 10V

功率 - 最大：  150mW

安装类型 ：  Surface Mount

包/盒 ：  SOT-563, SOT-666

供应商器件封装：  ES6

包装材料 ：  Tape & Reel (TR)

动态目录：  N-Channel Logic Level Gate FETs###/catalog/en/partgroup/n-channel-logic-level-gate-fets/16803?mpart=SSM6N37FE,LM&vendor=264&WT.z_ref_page_type=Part%20Search&WT.z_ref_page_sub_type=Part%20Detail%20Page&WT.z_ref_page_id=0;;其他的名称；

FET Feature：  Logic Level Gate

Packaging：  Tape & Reel (TR)

Mounting Type：  Surface Mount

Current - Continuous Drain (Id) @ 25° C：  250mA

Vgs(th) (Max) @ Id：  1V @ 1mA

Supplier Device Package：  ES6

Rds On (Max) @ Id, Vgs：  2.2 Ohm @ 100mA, 4.5V

FET Type：  2 N-Channel (Dual)

Power - Max：  150mW

Standard Package：  4,000

Drain to Source Voltage (Vdss)：  20V

Input Capacitance (Ciss) @ Vds：  12pF @ 10V

Package/Case：  SOT-563, SOT-666

Other Names：  SSM6N37FELMCT

rohs：  Lead free / RoHS Compliant

Mounting Style：  SMD/SMT

Transistor Polarity：  N-Channel

Gate-Source Breakdown Voltage：  10 V

Continuous Drain Current：  250 mA

Rds On：  5.6 Ohms

Power Dissipation：  150 mW

Package / Case：  SOT-563

Drain-Source Breakdown Voltage：  20 V

RoHS：  RoHS Compliant