型号: STGWA75H65DFB2
功能描述: TRENCH GATE FIELD-STOP, 650 V, 7
制造商: STMicroelectronics
Series: HB2
Package: Tube
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 115 A
Current - Collector Pulsed (Icm): 225 A
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
Power - Max: 357 W
Switching Energy: 1.428mJ (on), 1.05mJ (off)
Input Type: Standard
Gate Charge: 207 nC
Td (on/off) @ 25°C: 28ns/100ns
Test Condition: 400V, 75A, 2.2Ohm, 15V
Reverse Recovery Time (trr): 88 ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 Long Leads
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