型号:  ZXMN10A08G

功能描述:   MOSFET N-CHAN 100V SOT223

制造商:  Diodes/Zetex

Rohs：  Lead free / RoHS Compliant

标准包装：  1,000

FET 型 ：  MOSFET N-Channel, Metal Oxide

FET特点：  Logic Level Gate

漏极至源极电压（VDSS）：  100V

电流-连续漏极（编号）@ 25°C：  2A

Rds（最大）@ ID，VGS：  250 mOhm @ 3.2A, 10V

VGS（TH）（最大）@ Id：  2V @ 250µA

栅极电荷（Qg）@ VGS：  7.7nC @ 10V

输入电容（Ciss）@ Vds的：  405pF @ 50V

功率 - 最大：  2W

安装类型 ：  Surface Mount

包/盒 ：  TO-261-4, TO-261AA

供应商器件封装：  SOT-223

包装材料 ：  Tape & Reel (TR)

FET Feature：  Logic Level Gate

Packaging：  Tape & Reel (TR)

Mounting Type：  Surface Mount

Current - Continuous Drain (Id) @ 25° C：  2A (Tc)

Vgs(th) (Max) @ Id：  2V @ 250µA

Supplier Device Package：  SOT-223

Rds On (Max) @ Id, Vgs：  250 mOhm @ 3.2A, 10V

FET Type：  MOSFET N-Channel, Metal Oxide

Power - Max：  2W

Standard Package：  1,000

Drain to Source Voltage (Vdss)：  100V

Input Capacitance (Ciss) @ Vds：  405pF @ 50V

Gate Charge (Qg) @ Vgs：  7.7nC @ 10V

Package/Case：  TO-261-4, TO-261AA

Other Names：  ZXMN10A08GCT

rohs：  Lead free / RoHS Compliant