型号:  IPC302N20NFDX1SA1

功能描述:  MOSFET N-CH 200V 1A SAWN ON FOIL

制造商:  Infineon Technologies

Series:  OptiMOS™

Package:  Bulk

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  200 V

Current - Continuous Drain (Id) @ 25°C:  1A (Tj)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  100mOhm @ 2A, 10V

Vgs(th) (Max) @ Id:  4V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:  -

Vgs (Max):  -

Input Capacitance (Ciss) (Max) @ Vds:  -

FET Feature:  -

Power Dissipation (Max):  -

Operating Temperature:  -

Mounting Type:  Surface Mount

Supplier Device Package:  Sawn on foil

Package / Case:  Die