型号:  IRFHM8337TRPBF-IR

功能描述:  MOSFET N-CH 30V 12A 8PQFN DL

制造商:  International Rectifier

Series:  HEXFET®

Package:  Bulk

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  30 V

Current - Continuous Drain (Id) @ 25°C:  12A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  -

Rds On (Max) @ Id, Vgs:  12.4mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:  2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:  8.1 nC @ 4.5 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  755 pF @ 15 V

FET Feature:  -

Power Dissipation (Max):  2.8W (Ta), 25W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  8-PQFN-Dual (3.3x3.3), Power33

Package / Case:  8-PowerVDFN