型号:  IXFN180N20.

功能描述:   MOSFET, N, SOT-227B

制造商:  IXYS SEMICONDUCTOR

晶体管极性：  :N Channel

Continuous Drain Current Id：  :180A

Drain Source Voltage Vds：  :200V

On Resistance Rds(on)：  :10mohm

Rds(on) Test Voltage Vgs：  :10V

Threshold Voltage Vgs：  :4V

功耗：  :700W

Operating Temperature Min：  :-55°C

Operating Temperature Max：  :150°C

Transistor Case Style：  :ISOTOP

No. of Pins：  :3

MSL：  :-

SVHC：  :No SVHC (19-Dec-2012)

Avalanche Single Pulse Energy Eas：  :4J

Current Id Max：  :180A

Current Temperature：  :25°C

Full Power Rating Temperature：  :25°C

隔离电压：  :2.5kV

Junction Temperature Tj Max：  :150°C

Junction Temperature Tj Min：  :-55°C

No. of Transistors：  :1

On State Resistance Max：  :10mohm

工作温度范围：  :-55°C to +150°C

Pulse Current Idm：  :720A

Repetitive Avalanche Energy Max：  :64mJ

端接类型：  :Screw

Voltage Vds Typ：  :200V

Voltage Vgs Max：  :20V

Voltage Vgs Rds on Measurement：  :10V

Voltage Vgs th Max：  :4V

重量：  :0.046kg

Weight (kg)：  0.046

Tariff No.：  85412900