型号:  SI1905DL-T1-E3/BKN

功能描述:  MOSFET; Dual P-CH 1.8V (G-S) Trench

制造商:  Siliconix / Vishay

Channel Type:  P

Configuration:  Single

Dimensions:  2.2 x 1.35 x 1 mm

Drain Current:  ±0.57 A

Drain to Source On Resistance:  1.2 Ω

Drain to Source Voltage:  -8 V

Forward Transconductance:  1.2 S

Forward Voltage, Diode:  -1.2 V

Gate to Source Voltage:  ±8 V

Height:  0.039" (1mm)

Junction to Ambient Thermal Resistance:  400 °C/W

Length:  0.086" (2.2mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Surface Mount

Number of Elements per Chip:  2

Number of Pins:  6

Operating Temperature:  -55 to 150 °C

Package Type:  SC-70

Polarization:  P-Channel

Power Dissipation:  0.27 W

Series:  SI19 Series

Temperature Operating Range:  -55 to +150 °C

Total Gate Charge:  1.5 nC

Turn Off Delay Time:  10 ns

Turn On Delay Time:  6 ns

Typical Gate Charge @ Vgs:  1.5 nC @ -4.5 V

Voltage, Breakdown, Drain to Source:  -8 V

Width:  0.053" (1.35mm)