型号: SI1905DL-T1-E3/BKN
功能描述: MOSFET; Dual P-CH 1.8V (G-S) Trench
制造商: Siliconix / Vishay
Channel Type: P
Configuration: Single
Dimensions: 2.2 x 1.35 x 1 mm
Drain Current: ±0.57 A
Drain to Source On Resistance: 1.2 Ω
Drain to Source Voltage: -8 V
Forward Transconductance: 1.2 S
Forward Voltage, Diode: -1.2 V
Gate to Source Voltage: ±8 V
Height: 0.039" (1mm)
Junction to Ambient Thermal Resistance: 400 °C/W
Length: 0.086" (2.2mm)
Maximum Operating Temperature: +150 °C
Minimum Operating Temperature: -55 °C
Mounting Type: Surface Mount
Number of Elements per Chip: 2
Number of Pins: 6
Operating Temperature: -55 to 150 °C
Package Type: SC-70
Polarization: P-Channel
Power Dissipation: 0.27 W
Series: SI19 Series
Temperature Operating Range: -55 to +150 °C
Total Gate Charge: 1.5 nC
Turn Off Delay Time: 10 ns
Turn On Delay Time: 6 ns
Typical Gate Charge @ Vgs: 1.5 nC @ -4.5 V
Voltage, Breakdown, Drain to Source: -8 V
Width: 0.053" (1.35mm)
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