型号:  TK12J60W,S1VE(S

功能描述:  MOSFET N-CH 600V 11.5A TO3P

制造商:  Toshiba Semiconductor and Storage

Series:  -

Package:  Tray

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  600 V

Current - Continuous Drain (Id) @ 25°C:  11.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  300mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id:  3.7V @ 600µA

Gate Charge (Qg) (Max) @ Vgs:  25 nC @ 10 V

Vgs (Max):  ±30V

Input Capacitance (Ciss) (Max) @ Vds:  890 pF @ 300 V

FET Feature:  -

Power Dissipation (Max):  110W (Tc)

Operating Temperature:  150°C

Mounting Type:  Through Hole

Supplier Device Package:  TO-3P(N)

Package / Case:  TO-3P-3, SC-65-3