型号:  TP65H070LSG-TR

功能描述:  GANFET N-CH 650V 25A PQFN88

制造商:  Transphorm

Series:  TP65H070L

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):  650 V

Current - Continuous Drain (Id) @ 25°C:  25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  10V

Rds On (Max) @ Id, Vgs:  85mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:  4.8V @ 700µA

Gate Charge (Qg) (Max) @ Vgs:  9.3 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  600 pF @ 400 V

FET Feature:  -

Power Dissipation (Max):  96W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  3-PQFN (8x8)

Package / Case:  3-PowerDFN