型号:  RQ3E100ATTB

功能描述:  MOSFET P-CH 30V 10A/31A 8HSMT

制造商:  Rohm Semiconductor

Series:  -

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  P-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  30 V

Current - Continuous Drain (Id) @ 25°C:  10A (Ta), 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  4.5V, 10V

Rds On (Max) @ Id, Vgs:  11.4mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:  2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:  42 nC @ 10 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  1900 pF @ 15 V

FET Feature:  -

Power Dissipation (Max):  2W (Ta)

Operating Temperature:  150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  8-HSMT (3.2x3)

Package / Case:  8-PowerVDFN