型号:  SI4488DY-T1-E3/BKN

功能描述:  MOSFET; SOIC8 150V N-Channel Trench

制造商:  Siliconix / Vishay

Channel Type:  N

Configuration:  Quad Drain, Triple Source

Dimensions:  5 x 4 x 1.55 mm

Drain Current:  5 A

Drain to Source On Resistance:  0.5 Ω

Drain to Source Voltage:  150 V

Fall Time:  15 ns

Forward Transconductance:  18 S

Forward Voltage, Diode:  1 V

Gate to Source Voltage:  ±20 V

Height:  0.061" (1.55mm)

Junction to Ambient Thermal Resistance:  40 °C/W

Length:  0.196" (5mm)

Maximum Operating Temperature:  +150 °C

Minimum Operating Temperature:  -55 °C

Mounting Type:  Surface Mount

Number of Elements per Chip:  1

Number of Pins:  8

Operating and Storage Temperature:  -55 to +150 C

Package Type:  SO-8

Polarization:  Dual N-Channel

Power Dissipation:  1.4 W

Series:  SI44 Series

Temperature Operating Range:  -55 to +150 °C

Total Gate Charge:  36 nC

Turn Off Delay Time:  33 ns

Turn On Delay Time:  18 ns

Typical Gate Charge @ Vgs:  35 nC @ 75 V

Voltage, Breakdown, Drain to Source:  150 V

Width:  0.157" (4mm)