型号:  BSZ0804LSATMA1

功能描述:  MOSFET N-CH 100V 11A/40A TSDSON

制造商:  Infineon Technologies

Series:  OptiMOS™ 5

Package:  Tape & Reel (TR)Cut Tape (CT)Digi-Reel®

FET Type:  N-Channel

Technology:  MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):  100 V

Current - Continuous Drain (Id) @ 25°C:  11A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):  4.5V, 10V

Rds On (Max) @ Id, Vgs:  9.6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:  2.3V @ 36µA

Gate Charge (Qg) (Max) @ Vgs:  15 nC @ 4.5 V

Vgs (Max):  ±20V

Input Capacitance (Ciss) (Max) @ Vds:  2100 pF @ 50 V

FET Feature:  -

Power Dissipation (Max):  2.1W (Ta), 69W (Tc)

Operating Temperature:  -55°C ~ 150°C (TJ)

Mounting Type:  Surface Mount

Supplier Device Package:  PG-TSDSON-8-FL

Package / Case:  8-PowerTDFN